Semiconductor memory structure and method for manufacturing the same

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United States of America Patent

PATENT NO 11700724
APP PUB NO 20220367475A1
SERIAL NO

17320633

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Abstract

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A semiconductor structure includes a semiconductor substrate including a first active region and a chop region. The semiconductor structure also includes a source/drain region disposed in the first active region, an isolation structure disposed in the chop region, and a gate structure extending at least across the isolation structure in the chop region. The gate structure includes a gate electrode layer and a gate lining layer lining on the gate electrode layer. The gate lining layer includes a first portion having an upper surface that is lower than a bottom surface of the source/drain region.

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Patent Owner(s)

  • WINBOND ELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wei, Hung-Yu Taichung, TW 73 811

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