RF circuits including transistors having strained material layers
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United States of America Patent
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May 4, 2010
Grant Date -
Jun 2, 2005
app pub date -
Jan 10, 2005
filing date -
Sep 24, 2001
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Abstract
Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
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