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Abstract

A nonvolatile semiconductor memory device of the present invention includes: a main memory circuit including memory cells arranged in a matrix form, the memory cells being formed of electrically writable and erasable floating gate transistors each provided at an intersection of a bit line and a word line; and a redundant substitution information memory circuit including a plurality of memory cells formed of the electrically writable and erasable floating gate transistors, wherein one end of each memory cell formed of the floating gate transistors in the redundant substitution information memory circuit can be electrically connected to and disconnected from the bit line in the main memory circuit by a selection transistor so as to supply the memory cells in the redundant substitution information memory circuit with current for writing and reading operations via the bit lines.

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First Claim