Semiconductor device
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United States of America Patent
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Nov 1, 2022
Grant Date -
N/A
app pub date -
Apr 19, 2021
filing date -
Jun 26, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, having an active portion and a gate pad portion; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of a second conductivity type. The active portion has first semiconductor regions of the first conductivity type, first trenches, gate insulating films, first gate electrodes, an interlayer insulating film, and second semiconductor regions of the second conductivity type. The gate pad portion has at least one second trench, an insulating film 9b, at least one second gate electrode, at least one fourth semiconductor region of the second conductivity type, and a gate electrode pad. Between the gate electrode pad and the semiconductor substrate, a polycrystalline silicon film is provided.
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