Manufacturing method of semiconductor device

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United States of America Patent

PATENT NO 8552411
APP PUB NO 20120225498A1
SERIAL NO

13249503

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Abstract

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According to one embodiment, a manufacturing method of semiconductor device includes forming plural elements on a substrate, forming a silicon compound film so as to bury between a plurality of elements, and modifying the silicon compound film to a silicon dioxide film by radiating microwaves.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aoyama, Tomonori Yokohama, JP 78 1367
Miyano, Kiyotaka Tokyo, JP 73 1050

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