Scanning electron microscope and calculation method for three-dimensional structure depth

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United States of America Patent

PATENT NO 11164720
APP PUB NO 20200234916A1
SERIAL NO

16747761

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Abstract

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To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

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Patent Owner(s)

  • HITACHI HIGH-TECH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Yusuke Tokyo, JP 51 130
Bizen, Daisuke Tokyo, JP 24 53
Kitsuki, Hirohiko Tokyo, JP 12 33
Osaki, Mayuka Tokyo, JP 14 94
Suzuki, Makoto Tokyo, JP 471 4793
Yasui, Kenji Tokyo, JP 60 638
Yokosuka, Toshiyuki Tokyo, JP 36 177

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