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Abstract

A single-layered polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafers, etc., which attains excellent step height reduction and in-plane uniformity and is integrally molded by reaction injection molding, is provided. The polishing pad is a polyurethane-based foam 12 having a desired shape, as obtained by molding a gas-dissolved raw material having an inert gas dissolved under pressure in a polyurethane-base resin raw material by a reaction injection molding method, and includes a polishing region 14 having a polishing surface 14a suitable for polishing semi-conductor materials, etc. and having a Shore D hardness in the range of from 40 to 80 and a stress reduction region 16 which is present in the side opposing to the polishing surface 14a and which, when provided with a stress adjusting portion 22 of a desired pattern, is set up so as to have an amount of deflection, as applied with a load of 0.05 MPa, of 10 .mu.m or more.

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First Claim