Vertical DMOS transistor
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United States of America Patent
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app pub date -
Jun 23, 2017
filing date -
Dec 19, 2012
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Abstract
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated from the semiconductor body by a gate dielectric layer; a source region of a second conductivity type formed in the body region on a first side of the gate electrode; a trench formed in the semiconductor body on a second side of the gate electrode, the trench being lined with a sidewall dielectric layer and filled with a bottom dielectric layer and a conductive layer above the bottom dielectric layer, the conductive layer being electrically connected to the gate electrode; and a doped sidewall region of the second conductivity type formed in the semiconductor body along the sidewall of the trench where the doped sidewall region forms a vertical drain current path for the transistor.
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