T-gate forming method for high electron mobility transistor and gate structure thereof
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United States of America Patent
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Apr 26, 2011
Grant Date -
May 8, 2008
app pub date -
Feb 1, 2007
filing date -
Nov 3, 2006
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Abstract
A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.
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