Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 11769822
SERIAL NO

17411704

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Abstract

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A semiconductor device includes a substrate, a semiconductor fin, gate spacers, a gate structure. The semiconductor fin is on the substrate. The gate spacers are over the semiconductor fin. The gate structure is on the semiconductor fin and between the gate spacers. The gate structure includes a gate dielectric layer and a first work function metal over the gate dielectric layer, in which a top surface of the first work function metal is lower than a top surface of the gate dielectric layer, and a distance between the top surface of the first work function metal and the top surface of the gate dielectric layer is less than about 1 nm.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jung-Hao Taichung, TW 25 30
Lin, Li-Te Hsinchu, TW 112 463

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