Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device
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United States of America Patent
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Dec 26, 2006
Issued Date -
N/A
app pub date -
Dec 9, 2002
filing date -
Dec 13, 2001
priority date (Note) -
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Abstract
A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (-1/4+2 m)..pi. and (1/4+2 m)..pi. inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.
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