Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods
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United States of America Patent
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Sep 20, 2016
Grant Date -
Nov 5, 2015
app pub date -
Aug 1, 2013
filing date -
Oct 15, 2012
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Abstract
Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
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