Method of forming a semiconductor structure with non-uniform metal widths
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 20, 2007
Issued Date -
N/A
app pub date -
Apr 20, 2005
filing date -
Jun 27, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A power transistor structure uses metal drain and source strips with non-uniform widths to reduce variations in current density across the power transistor structure. The reductions in current density, in turn, reduce the source-to-drain turn on resistance and maximize the overall current carrying capacity of power transistor structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully