Semiconductor device for generating two or more different internal voltages
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United States of America Patent
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Oct 24, 2000
Grant Date -
N/A
app pub date -
Dec 3, 1998
filing date -
Jul 21, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A novel semiconductor device having two different power circuits is disclosed. Even if the output of the stage before a voltage conversion circuit declines due to the decline of the level of the power circuits or the voltage drop through a resistor, the voltage conversion circuit performs a normal operation. The semiconductor device comprises a first power circuit for generating a first source voltage, a second power circuit for generating a second source voltage higher than the first source voltage, and a second power level detection circuit for detecting the second source voltage. The first power circuit changes the first source voltage in accordance with the result of detection by the second power level detection circuit.
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