Semiconductor device
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United States of America Patent
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Dec 5, 2006
Grant Date -
Mar 24, 2005
app pub date -
Sep 16, 2004
filing date -
Sep 19, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
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