Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof

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United States of America Patent

PATENT NO 5866092
SERIAL NO

08867535

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Abstract

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A garnet crystal for growing a substrate is used for manufacturing a magneto-optic element. The garnet crystal is grown by the Czochralski method and has a chemical structure represented by Gd.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The method of manufacturing the garnet crystal for growing a magneto-optic element includes the steps of: preparing a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible by mixing the oxides together in a weight ratio such that the atomic ratio is Gd:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5; heating the mixture to make a melt of the mixture; and growing a garnet from the melt of the mixture by the Czochralski method.

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Patent Owner(s)

  • MITSUBISHI GAS CHEMICAL COMPANY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuda, Tsuguo Sendai, JP 51 554
Takeda, Norio Tokyo, JP 34 625

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