Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor device

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United States of America Patent

PATENT NO 11862684
SERIAL NO

17420416

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Abstract

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A recycle wafer of silicon carbide has a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 μm from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times a standard deviation of a nitrogen concentration in the substrate region from an average value of the nitrogen concentration in the substrate region is greater than a minimum value of a nitrogen concentration in the first silicon carbide layer.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTD5-33 KITAHAMA 4-CHOME CHUO-KU OSAKA-SHI OSAKA 5410041

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Honke, Tsubasa Osaka, JP 27 17
Okita, Kyoko Osaka, JP 63 127

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