Temperature sensor circuits for integrated circuit devices
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United States of America Patent
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Jul 5, 2022
Grant Date -
Nov 25, 2021
app pub date -
May 6, 2021
filing date -
May 25, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.
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