ESD protection for GMR sensors of magnetic heads using SiGe integrated circuit devices
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United States of America Patent
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Mar 23, 2004
Grant Date -
Nov 13, 2003
app pub date -
May 10, 2002
filing date -
May 10, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A magnetic head includes a GMR read head that is protected from electrostatic discharge (ESD) on a slider by a silicon germanium (SiGe) integrated circuit device. In a preferred embodiment the SiGe circuit device includes one or more silicon germanium heterojunction bipolar transistors (SiGe HBT) or silicon germanium carbon heterojunction bipolar transistors (SiGeC HBT) that is electrically connected across the electrical leads of the GMR read head. Particular electrical connection configurations with the SiGe circuit devices include diodic modes, npn modes, series cascade modes and two stage ESD network configurations. The silicon chip may be sandwiched between the slider body and the read/write head or the read/write head may be sandwiched between the slider body and the silicon chip.
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