Transient capless annealing process for the activation of ion implanted compound semiconductors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 1, 1985
Grant Date -
N/A
app pub date -
May 27, 1983
filing date -
May 27, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method and apparatus is described for activating implants in gallium arsenide incorporating crushed gallium arsenide and hydrogen to form a gas mixture to provide an atmosphere for the gallium arsenide to be activated and a furnace for heating the crushed gallium arsenide to a first temperature and the gallium arsenide to be activated to a second temperature. The invention overcomes the problem of wafer loss at the surface by evaporation during anneal and activation of gallium arsenide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully