Method for manufacturing photovoltaic element
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United States of America Patent
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Apr 30, 2002
Grant Date -
N/A
app pub date -
Sep 24, 1996
filing date -
Sep 25, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a method for manufacturing a photovoltaic element wherein a pin-structure formed by laminating n-, i- and p-type semiconductor layers, each of which contains silicon atoms and has a non-monocrystalline crystal structure is formed at least one or more times on a substrate, the method comprising steps of forming each of the semiconductor layers and annealing the surface of at least one of the semiconductor layers or the substrate in an atmosphere of hydrogen gas, helium gas or argon gas that contains 1 to 1000 ppm of oxygen atom containing gas.
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