Etching method and etching apparatus

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United States of America Patent

PATENT NO 11335567
APP PUB NO 20210090898A1
SERIAL NO

17019716

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Abstract

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There is provided an etching method, including: loading a substrate having a metallic film formed on the substrate into a processing container; and subsequently, oxidizing and etching the metallic film by setting an internal pressure of the processing container to a pressure higher than 2.40×104 Pa and supplying an oxidizing gas for oxidizing the metallic film and an etching gas comprising β-diketone into the processing container.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuwajima, Ryo Nirasaki, JP 7 608
Shindo, Naoki Nirasaki, JP 57 468
Toda, Satoshi Nirasaki, JP 18 229

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