Ridge waveguide device surface passivation by epitaxial regrowth
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United States of America Patent
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May 27, 2008
Grant Date -
Feb 19, 2004
app pub date -
Aug 12, 2003
filing date -
Aug 12, 2002
priority date (Note) -
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Abstract
A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.
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