Silicide films through selective deposition

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United States of America

PATENT NO 11978635
APP PUB NO 20210202256A1
SERIAL NO

17197871

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Abstract

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Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

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Patent Owner(s)

  • APPLIED MATERIALS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breil, Nicolas San Jose, US 16 64
Mallick, Abhijit Basu Palo Alto, US 249 10248
Srinivasan, Swaminathan Pleasanton, US 28 1372

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