Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
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United States of America Patent
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Feb 7, 2006
Grant Date -
Aug 5, 2004
app pub date -
Jan 22, 2004
filing date -
Jan 29, 2003
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Abstract
A semiconductor structure having a high-strained crystalline layer with a low crystal defect density and a method for fabricating such a semiconductor structure are disclosed. The structure includes a substrate having a first material comprising germanium or a Group (III)-Group (V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.
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