Ag-Bi-base alloy sputtering target, and method for producing the same
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United States of America Patent
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Aug 3, 2010
Grant Date -
Nov 18, 2004
app pub date -
May 13, 2004
filing date -
May 16, 2003
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Abstract
The sputtering target made of a Ag--Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %.sup.-1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I.sub.Bi(102)/I.sub.Ag(111)+I.sub.Ag(200)+I.sub.Ag(220)+I.sub.Ag(311)- )]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
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