Semiconductor device with semiconductor fins and floating gate
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United States of America Patent
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Aug 26, 2014
Grant Date -
Oct 31, 2013
app pub date -
Apr 30, 2012
filing date -
Apr 30, 2012
priority date (Note) -
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Abstract
According to one exemplary implementation, a semiconductor device includes a channel, a source, and a drain situated in a first semiconductor fin. The channel is situated between the source and the drain. The semiconductor device also includes a control gate situated in a second semiconductor fin. A floating gate is situated between the first semiconductor fin and the second semiconductor fin. The semiconductor device can further include a first dielectric region situated between the floating gate and the first semiconductor fin and a second dielectric region situated between the floating gate and the second semiconductor fin.
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