ALD deposition of ruthenium
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United States of America Patent
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Jul 11, 2006
Grant Date -
Jun 2, 2005
app pub date -
Nov 28, 2003
filing date -
Nov 28, 2003
priority date (Note) -
Expired
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Abstract
A method to deposit nucleation problem free ruthenium by ALD. The nucleation problem free, relatively smooth ruthenium ALD film is deposited by the use of plasma-enhanced ALD of ruthenium underlay for consequent thermal ruthenium ALD layer. In addition, oxygen or nitrogen plasma treatments of SiO.sub.2 or other dielectrics leads to uniform ALD ruthenium deposition. The method has application as a direct plating layer for a copper interconnect or metal gate structure for advanced CMOS devices.
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