Isolated lateral MOSFET in epi-less substrate
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United States of America Patent
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Sep 14, 2010
Grant Date -
Oct 2, 2008
app pub date -
Dec 17, 2007
filing date -
Mar 28, 2007
priority date (Note) -
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Abstract
A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of the first conductivity type which extends under the gate. The body region may have a non-monotonic vertical doping profile with a portion located deeper in the substrate having a higher doping concentration than a portion located shallower in the substrate. The lateral MOSFET may be drain-centric, with the source region and an optional dielectric-filled trench surrounding the drain region.
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