Method of fabricating capacitor having hafnium oxide
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United States of America Patent
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Jun 24, 2003
Issued Date -
N/A
app pub date -
May 9, 2002
filing date -
Jun 30, 2001
priority date (Note) -
Expired
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Abstract
Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti.sub.1-x Hf.sub.x N layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti.sub.1-x Hf.sub.x N layer; and forming a HfO.sub.2 layer on an interface between the electrode layer and the Ti.sub.1-x Hf.sub.x N layer by performing a thermal treatment in an oxygen gas-containing atmosphere.
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