Device and method of manufacture for a low noise junction field effect transistor
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United States of America Patent
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Aug 4, 2009
Grant Date -
Mar 13, 2008
app pub date -
Sep 13, 2006
filing date -
Sep 13, 2006
priority date (Note) -
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Abstract
A microelectronic product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.
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