Magnetic memory devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9437654
APP PUB NO 20160093669A1
SERIAL NO

14715633

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Abstract

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Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jang, Young-Man Hwaseong-si, KR 21 237
Kim, Kee-Won Suwon-si, KR 47 492
Kim, Kwang-Seok Seoul, KR 50 506
Lee, Sung-Chul Osan-si, KR 129 625
Pi, Ung-Hwan Hwaseong-si, KR 31 272

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