Vertical memory devices and methods of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11217603
APP PUB NO 20210043648A1
SERIAL NO

16850097

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Abstract

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A vertical memory device includes a substrate with a cell region, a through via region on opposite sides of the cell region, and a mold region surrounding the cell and through via regions, gate electrodes spaced apart from each other along a first direction vertical to an upper surface of the substrate, and extending in a second direction parallel to the upper surface of the substrate, a channel extending in the first direction on the cell region, and extending through at least a portion of the stacked gate electrodes, and a first mold including first and second layers alternately and repeatedly stacked along the first direction on the mold region, the first and second layers including different insulation materials from each other, and each of the second layers of the first mold being at the same height as and contact a corresponding one of the gate electrodes.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Bonghyun Yongin-si, KR 12 25
Kim, Junhyoung Seoul, KR 44 58
Yoon, Seonho Hwaseong-si, KR 3 1

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