Read-preferred SRAM cell design
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United States of America Patent
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Oct 14, 2008
Grant Date -
Nov 1, 2007
app pub date -
Oct 17, 2006
filing date -
Apr 28, 2006
priority date (Note) -
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Abstract
A read-preferred SRAM cell includes a pull-up MOS device having a first drive current, a pull-down MOS device coupled to the pull-up MOS device, the pull-down MOS device having a second drive current, and a pass-gate MOS device having a third drive current coupled to the pull-up MOS device and the pull-down MOS device. The first drive current and the third drive current preferably have an .alpha. ratio of between about 0.5 and about 1. The second drive current and the third drive current preferably have a .beta. ratio of between about 1.45 and 5.
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