Semiconductor device and method for manufacturing the same
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United States of America Patent
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Dec 14, 2010
Grant Date -
Mar 6, 2008
app pub date -
Aug 30, 2007
filing date -
Aug 30, 2006
priority date (Note) -
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Abstract
A semiconductor device according to an embodiment includes device isolating layers having a top surface lower than a sheet height of a semiconductor substrate; a gate insulating layer and a gate electrode sequentially stacked on the upper surface of an active region of the semiconductor substrate between the device isolating layers; a spacer formed at the side wall of the gate electrode; a source/drain region formed in the semiconductor substrate between the spacer and the device isolating layers; and a silicide film formed on the source/drain region.
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