SOI MOSFETS exhibiting reduced floating-body effects

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7163866
APP PUB NO 20040142515A1
SERIAL NO

10732277

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Abstract

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Disadvantages of the floating body of a SOI MOSFET are addressed by providing a pocket halo implant of indium beneath the gate and in the channel region of the semiconductor SOI layer of the MOSFET. Also provided is the method for fabricating the device.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Assaderaghi, Fariborz Mahopac, NY 85 3000
Rausch, Werner Stormville, NY 32 976
Schepis, Dominic Joseph Wappingers Falls, NY 5 123
Shahidi, Ghavam G Elmsford, NY 396 8084

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