Self-organized quantum dot manufacturing method and quantum dot semiconductor structure

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United States of America

PATENT NO 11227765
SERIAL NO

16932691

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Abstract

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The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

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Patent Owner(s)

  • NATIONAL YANG MING CHIAO TUNG UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ching-Lun Baoshan Township, Hsinchu County, TW 9 7
Huang, Tsung-Lin Kaohsiung, TW 2 0
Li, Pei-Wen Hsinchu, TW 8 72
Peng, Kang-Ping Yuli Township, Hualien County, TW 2 0

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