Resistance division circuit and semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 18, 2004
Grant Date -
Sep 11, 2003
app pub date -
Mar 7, 2003
filing date -
Mar 8, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A resistance division circuit disclosed herein has a first MIS transistor having a first gate terminal, a first source terminal, a first drain terminal and a first back gate terminal, wherein the first gate terminal is regarded as a first terminal, and the first source terminal, the first drain terminal and the first back gate terminal are regarded as a second terminal, and one of the first terminal and the second terminal is connected to a first node of a first voltage; and a second MIS transistor having a second gate terminal, a second source terminal, a second drain terminal and a second back gate terminal, wherein the second gate terminal is regarded as a third terminal, and the second source terminal, the second drain terminal and the second back gate terminal are regarded as a fourth terminal, and one of the third terminal and the fourth terminal is connected to the other of the first terminal and the second terminal and the other of the third terminal and the fourth terminal is connected to a second node of a second voltage.
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