Imaging array utilizing thyristor-based pixel elements
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United States of America Patent
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Jul 24, 2007
Grant Date -
Apr 29, 2004
app pub date -
Oct 20, 2003
filing date -
Apr 24, 2000
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Abstract
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped quantum well interfaces that are spaced apart from one another. Incident radiation within a predetermined wavelength resonates within the cavity of a given pixel element for absorption therein that causes charge accumulation. The accumulated charge is related to the intensity of the incident radiation. The heterojunction-thyristor-based pixel element is suitable for many imaging applications, including CCD-based imaging arrays and active-pixel imaging arrays.
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