Semiconductor device including insulating element and method of making

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United States of America Patent

PATENT NO 11864376
APP PUB NO 20210343723A1
SERIAL NO

17370673

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Abstract

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A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Shun-Yi Hsinchu, TW 18 100
Wang, Chin-Shan Hsinchu, TW 16 44

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