Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon
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United States of America Patent
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Apr 26, 2011
Grant Date -
Oct 16, 2008
app pub date -
Aug 2, 2007
filing date -
Aug 30, 2006
priority date (Note) -
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Abstract
A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.
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