Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence
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United States of America Patent
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Feb 11, 1992
Grant Date -
N/A
app pub date -
Dec 20, 1990
filing date -
Dec 20, 1990
priority date (Note) -
Expired
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Abstract
Disclosed is an edge-emitting semiconductor laser that has a single waveguiding structure, and that comprises means for reducing the transverse divergence of the far-field pattern of the laser emission. Typically these means comprise reflecting means (preferably transverse distributed Bragg reflectors) disposed parallel to the junction plane of the laser. Lasers according to the invention can have a highly stable single mode output having a substantially symmetrical far field pattern. Disclosed is also an advantageous method of making ridge-waveguide lasers that can, inter alia, be used to make lasers according to the invention. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.
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