Method of checking the state of a capacitor fuse in which the voltage applied to the capacitor fuse is the same level as voltage applied to memory cells
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United States of America Patent
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Mar 30, 2004
Grant Date -
Oct 23, 2003
app pub date -
Apr 9, 2003
filing date -
Apr 16, 2002
priority date (Note) -
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Abstract
A method is disclosed for checking the state of a capacitor fuse in which the voltage that is applied to the capacitor fuse is made the same level as voltage that is applied to memory cells. When detecting the occurrence of cutting of a capacitor fuse, voltage HVCCF (0.7 V), which is a voltage that is half the voltage of the power supply VINTS (1.4 V) for driving a sense amplifier, is used to charge the capacitor fuse, and the difference in potential between the voltage that has accumulated in the capacitor fuse and a voltage (0.5 V) that is lower than HVCCF is amplified by a sense amplifier and then latched by a latch circuit unit. Voltage HVCCF (0.7 V) that is applied across the two electrodes of the capacitor fuse is a voltage of the same level as the voltage that is applied to normal memory cells, and the reliability of the semiconductor memory device is therefore improved.
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