Address generating and decoding circuit for use in a burst-type and high-speed random access memory device which has a single data rate and a double data rate scheme

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United States of America Patent

PATENT NO 6356504
SERIAL NO

09653442

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Abstract

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A burst-type random access memory device according to the present invention includes an address generator that receives an initial address to generate a sequence of burst addresses according to either one of a single data rate mode and a double data rate mode. A decoding circuit decodes the burst address thus generated. Therefore, in the memory device are automatically generated a sequence of burst addresses necessary for a sequential/interleaved burst operation of the single data rate mode and the double data rate mode.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Eun-Cheol Kyunggi-do, KR 12 158

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