Method for manufacturing antistatic integrated circuit trays of polymer materials using ion implantation
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United States of America Patent
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Jun 19, 2001
Grant Date -
N/A
app pub date -
Nov 4, 1999
filing date -
Nov 18, 1998
priority date (Note) -
Expired
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Abstract
A method for providing anti-static characteristics for polymeric, integrated circuit (IC) trays, which allows gaseous ions, such as nitrogen and argon, or metal ions, such as Ti, Li and Al, to be implanted to a surface depth of 1.5 .mu.m in IC trays. In addition to experiencing no dimensional changes during the antistaticity working, the IC trays have a uniform distribution of ions over their surfaces and range, in surface resistance, from 10.sup.6 to 10.sup.12 .OMEGA./cm.sup.2.
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