Semiconductor device having fuse element arranged between electrodes formed in different wiring layers
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United States of America Patent
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Jun 23, 2009
Grant Date -
Aug 2, 2007
app pub date -
Jan 9, 2007
filing date -
Jan 31, 2006
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a lower electrode, an upper electrode, and a fuse element that connects the lower electrode and the upper electrode. The height of the fuse element is greater than the depth of focus of a laser beam to be irradiated. The diameter of the fuse element is smaller than the diffraction limit of the laser beam. Thus, in the present invention, a vertically long fuse element is used, so that it is possible to efficiently absorb the energy of the laser beam. It is possible to cut the fuse element by using an optical system having a small depth of focus, so that the damage imposed on a member located above or below the fuse element is very small. As a result, the fuse element can be without destructing the passivation film.
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