Type III-V semiconductor substrate with monolithically integrated capacitor

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United States of America Patent

PATENT NO 11916068
APP PUB NO 20230049654A1
SERIAL NO

17977875

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Abstract

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A semiconductor die includes a barrier layer of type III-V semiconductor material, a channel layer of type III-V semiconductor material disposed below the barrier layer, the channel layer forming a heterojunction with the barrier layer such that a two-dimensional charge carrier gas is disposed in the channel layer near the heterojunction, and a capacitor monolithically formed in the semiconductor die, wherein a dielectric medium of the capacitor includes a first section of the barrier layer.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AUSTRIA AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imam, Mohamed Chandler, US 38 266
Kim, Hyeongnam Chandler, US 16 35

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