Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials

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United States of America Patent

PATENT NO 8198152
APP PUB NO 20110210398A1
SERIAL NO

12917700

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Abstract

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In sophisticated semiconductor devices, a replacement gate approach may be applied, in which a channel semiconductor material may be provided through the gate opening prior to forming the gate dielectric material and the electrode metal. In this manner, specific channel materials may be provided in a late manufacturing stage for different transistor types, thereby providing superior transistor performance and superior flexibility in adjusting the electronic characteristics of the transistors.

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GLOBALFOUNDRIES U S INC400 STONEBREAK ROAD EXTENSION MALTA NY 12020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beyer, Sven Dresden, DE 102 1276
Griebenow, Uwe Markkleeberg, DE 57 790
Hoentschel, Jan Dresden, DE 218 2532
Scheiper, Thilo Dresden, DE 94 1027

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