Semiconductor device with embedded magnetic flux concentrator
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United States of America Patent
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Jun 6, 2023
Grant Date -
Nov 26, 2020
app pub date -
May 20, 2020
filing date -
May 24, 2019
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Abstract
A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.
First Claim
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- 15 United States
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Patent Owner(s)
- MELEXIS TECHNOLOGIES SA
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- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Van, Der Wiel Appolonius Jacobus | Duisburg, BE | 33 | 113 |
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