Method of fabricating an analog semiconductor device having a salicide layer
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United States of America Patent
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Jul 14, 1998
Grant Date -
N/A
app pub date -
Jun 26, 1997
filing date -
Jun 29, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
An analog semiconductor device having a salicide(self-aligned silicide) layer and a method of fabricating the same are disclosed. An isolation layer is formed on a semiconductor substrate to define an active region, and a resistor is formed on the isolation layer. A capacitor insulating layer and dummy upper capacitor electrode are formed on a predetermined portion of the resistor, and a salicide layer is selectively formed on the dummy upper capacitor electrode and exposed portions of the resistor. The dummy upper capacitor electrode and one side of the exposed portion of the resistor are electrically connected to each other, to thereby form the analog semiconductor device.
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